Kingston HyperX 4GB DDR4 2666MHz Desktop Memory

Vendor: Kingston
HX426C16FB3/4 HX426C15FB/44GB 512M x 64-BitDDR4-2666 CL15 288-Pin DIMMDESCRIPTIONHyperX HX426C15FB/4 is a 512M x 64-bit (4GB) DDR4-2666 CL15SDRAM (Synchronous DRAM) 1Rx8, memory module, based oneight 512M x 8-bit FBGA components per...


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4GB 512M x 64-Bit
DDR4-2666 CL15 288-Pin DIMM

HyperX HX426C15FB/4 is a 512M x 64-bit (4GB) DDR4-2666 CL15
SDRAM (Synchronous DRAM) 1Rx8, memory module, based on
eight 512M x 8-bit FBGA components per module. Each module
kit supports Intel® Extreme Memory Profiles (Intel® XMP)
2.0. Each module has been tested to run at DDR4-2666 at a low
latency timing of 15-17-17 at 1.2V. Additional timing parameters
are shown in the Plug-N-Play (PnP) Timing Parameters
section below. The JEDEC standard electrical and
mechanical specifications are as follows:

CL(IDD) 15 cycles
Row Cycle Time (tRCmin) 45ns(min.)
Refresh to Active/Refresh 260ns(min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 26.25ns(min.)
Maximum Operating Power TBD W*
UL Rating 94 V - 0
Operating Temperature 0o C to +85o C
Storage Temperature -55o C to +100o C

• JEDEC/PnP: DDR4-2666 CL15-17-17 @1.2V
DDR4-2400 CL14-16-16 @1.2V
DDR4-2133 CL12-14-14 @1.2V
•XMP Profile #1: DDR4-2666 CL15-17-17 @1.2V

• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• Height 1.340” (34.04mm), w/heatsink

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